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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE15032/D Complementary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. * DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc hFE = 10 (Min) @ IC = 2.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 250 Vdc (Min) -- MJE15032, MJE15033 * High Current Gain -- Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc * TO-220AB Compact Package MAXIMUM RATINGS MJE15032 * MJE15033 * *Motorola Preferred Device NPN PNP 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS PD, POWER DISSIPATION (WATTS) II I III II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III I I II I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB PD PD MJE15032 MJE15033 250 250 5.0 8.0 16 2.0 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 50 0.40 Watts W/_C Watts W/_C 2.0 0.016 TJ, Tstg - 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic CASE 221A-06 TO-220AB Symbol RJC RJA Max 2.5 Unit Thermal Resistance, Junction to Case _C/W _C/W Thermal Resistance, Junction to Ambient TA TC 62.5 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 MJE15032 MJE15033 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) ICBO IEBO Vdc MJE15032, MJE15033 MJE15032, MJE15033 250 -- -- -- Adc Adc 10 10 ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE -- 50 50 10 -- -- -- -- -- Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) VCE(sat) VBE(on) 0.5 1.0 Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 30 -- MHz (1) Pulse Test: Pulse Width (2) fT = hfe* ftest. v 300 s, Duty Cycle v 2.0%. 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 2. Thermal Response 2 Motorola Bipolar Power Transistor Device Data MJE15032 MJE15033 100 100 s 10 50 ms 250 ms 1.0 10 ms 0.1 0.01 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1000 IC, COLLECTOR CURRENT (AMPS) 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. MJE15032 & MJE15033 Safe Operating Area NPN -- MJE15032 1000 150C h FE, DC CURRENT GAIN 25C 100 -55C h FE, DC CURRENT GAIN 100 -55C 10 1000 PNP -- MJE15033 150C 25C 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 1.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 4. NPN -- MJE15032 VCE = 5 V DC Current Gain 10 10 Figure 5. PNP -- MJE15033 VCE = 5 V DC Current Gain V, VOLTAGE (VOLTS) 1.0 -55C 25C 150C V, VOLTAGE (VOLTS) 1.0 -55C 25C 150C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 6. NPN -- MJE15032 VCE = 5 V VBE(on) Curve Figure 7. PNP -- MJE15033 VCE = 5 V VBE(on) Curve Motorola Bipolar Power Transistor Device Data 3 MJE15032 MJE15033 NPN -- MJE15032 10 100 PNP -- MJE15033 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 150C 1.0 25C 10 1.0 25C -55C 150C -55C 0.1 0.1 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. NPN -- MJE15032 VCE(sat) IC/IB = 10 100 100 Figure 9. PNP -- MJE15033 VCE(sat) IC/IB = 10 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 10 25C 1.0 150C 150C 10 25C -55C 1.0 -55C 0.1 0.1 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 10. NPN -- MJE15032 VCE(sat) IC/IB = 20 10 V BE, BASE EMITTER VOLTAGE (VOLTS) V BE, BASE EMITTER VOLTAGE (VOLTS) 10 Figure 11. PNP -- MJE15033 VCE(sat) IC/IB = 20 1.0 -55C 25C 150C 1.0 -55C 25C 150C 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 12. NPN -- MJE15032 VBE(sat) IC/IB = 10 Figure 13. PNP -- MJE15033 VBE(sat) IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data MJE15032 MJE15033 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 MJE15032 MJE15033 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data MJE15032/D |
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